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PD - 94190C
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
75LQ150
75 Amp, 150V
Major Ratings and Characteristics
Description/Features The 75LQ150 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability * Surface Mount * Lightweight * * * *
Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 75Apk, TJ =125C
75LQ150 75
Units A
150 700 0.78
V A V
TJ, Tstg Operating and storage -55 to 150
C
CASE STYLE
1
CATHODE
2
ANODE
3
ANODE
Case Outline and Dimensions-SMD-1
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1
04/26/02
75LQ150
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
75LQ150 150
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 700 A @ tp = 8.3 ms half-sineR
Limits
75
Units
A
Conditions
50% duty cycle @ TC = 95C, square waveform R
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop See Fig. 1Q
Limits
1.18 1.45 1.06 1.44 0.78 0.96
Units
V V V V V V mA mA mA pF nH @ 75A @ 150A @ 75A @ 150A @ 75A @ 150A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C R TJ = 25C R TJ = 125C R
I RM
Max. Reverse Leakage Current See Fig. 2Q
0.015 3.0 20
VR = rated VR R
CT LS
Max. Junction Capacitance Typical Series Inductance
1070 5.9
VR = 5VDC ( 1MHz, 25C ) R Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style 2.6 300 X180 SMD-1 g mils
Limits Units
-55 to 150 -55 to 150 0.75 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4 R
Q Pulse Width < 300s, Duty Cycle < 2% R Pins 2 and 3 externally tied together
2
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75LQ150
100
125C
10
Reverse Current - I R ( mA )
100C
1
1000
75C
0.1
0.01
25C
0.001
0.0001
Instantaneous Forward Current - I F (A)
0
40
80
120
160
100
Reverse Voltage - V (V) R
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Tj = 125C 10
Tj = 25C
10000
Junction Capacitance - C T (pF)
Tj = -55C
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - V F (V)
TJ = 25C
1000
Fig. 1 - Max. Forward Voltage Drop Characteristics
100 0 40 80 120 160
Reverse Voltage -V R (V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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75LQ150
1 D = 0.50
Thermal Response (Z thJC)
0.20 0.1 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
180 160
75LQ150
R thJC = 0.75C/W
Allowable Case Temprature - (C)
140 120
DC
100 80 60 40 20 0 0 20 40 60 80 100 120
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02
4
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